Mitsubishi Electric - Changes for the Better
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GaN, GaAs, and Silicon
RF/Microwave Devices
100-watt GaN IMHEMT
The
Mitsubishi MGFK50G3745
provides
100-watts of power for Ku-Band SATCOM applications.
Features (Typical)
Frequency:
13.75 ~ 14.5 GHz
Power Output:
100 Watts
Power Added Efficiency:
30%
Design:
Internally Matched FET
3rd Order Intermods:
-25 dBc (Min.)
0.32 dB Noise Figure GaAs HEMT
The
Mitsubishi MGF4938AM
provides
0.32db noise figure for S to Ku-Band applications.
Features (Typical)
Frequency:
6 -18 GHz
Noise Figure:
0.32 dB @ 12 GHz
Associated Gain:
12.5 dB @ 12 GHz
Package:
4-Pin flat lead
7-watt MOS FET Module
The
Mitsubishi RA07M4452M
provides
7 watts over the 440 - 520 MHz band for portable radios.
Features (Typical)
Frequency:
440 - 520 MHz
Power Output:
7 Watts
Total Efficiency:
40%
Package:
30 x 10 x 5.4 mm Module
Optical
Devices
25Gbps EML Laser Module
This 25Gbps EML CAN supports high speed data transmission in 5G mobile base stations.
400Gbps Laser Diode Transmitter Subassembly
Mitsubishi's new laser-diode Transmitter Optical Subassembly (TOSA) offers 400Gbps communication speeds in 8 wave-lengths with module pairs.
Principals
Aethercomm
American Microwave
API/Inmet
API/Weinschel
BSC Filters
Corning Gilbert
Custom MMIC
Diamond Antenna
Dow-Key Microwave
K & L Microwave
Knowles Precision Devices
Marki Microwave
Mitsubishi Electric
NexTek
Norden Millimeter
Pole/Zero Corporation
Southwest Microwave
Teledyne Storm Microwave
Wenzel Associates
X-Microwave
Please Visit Our
Web Site.
The site is easy to navigate and provides immediate access to technical articles and tools provided by our principals to help in the design process.
Email us
your comments and suggestions for further improvement.
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